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Semiconductor devices and methods of manufacturing the same
Patent number: 8455359
Abstract: In a method of forming a conductive pattern structure of a semiconductor device, a first insulating interlayer is formed on a substrate. A first wiring is formed to pass through the first insulating interlayer. An etch stop layer and a second insulating interlayer are sequentially formed on the first insulating interlayer. A second wiring is formed to pass through the second insulating interlayer and the etch stop layer. A dummy pattern is formed to pass through the second insulating layer and the etch stop layer at the same time as forming the second wiring. The second wiring is electrically connected to the first wiring. The dummy pattern is electrically isolated from the second wiring.
Type: Grant
Filed: November 4, 2011
Date of Patent: June 4, 2013
Assignee: Samsung Electronics Co., Ltd.
Inventors: Kook-Joo Kim, Jin-Ho Kim, Seung-Ki Chae, Pil-Kwon Jun, Sun-Hee Park, Gyoung-Eun Byun
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Etching apparatus and etching method
Patent number: 8361274
Abstract: A vacuum processing apparatus is provided with: a vacuum processing tank; a first gas introduction section that is constructed such that a first processing gas in a radical state is introduced into the vacuum processing tank and is guided to a semiconductor wafer; and a second gas introduction section that is constructed such that a second processing gas that reacts with the first processing gas is introduced into the vacuum processing tank and is guided to the semiconductor wafer. The second gas introduction section has two shower nozzles provided at positions on either side of an introduction pipe provided for the first gas introduction section. According to this vacuum processing apparatus, high speed processing of a number of processing objects can be achieved. Moreover, the in-plane uniformity of the processing objects after processing can be ensured.
Type: Grant
Filed: January 10, 2005
Date of Patent: January 29, 2013
Assignees: Samsung Electronics Co., Ltd, Ulvac, Inc.
Inventors: Kwang-Myung Lee, Ki-Young Yun, Il-Kyoung Kim, Sung-Wook Park, Seung-Ki Chae, No-Hyun Huh, Jae-Wook Kim, Jae-Hyuck An, Woo-Seok Kim, Myeong-Jin Kim, Kyoung-Ho Jang, Shinji Yanagisawa, Kengo Tsutsumi, Seiichi Takahashi
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SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
Publication number: 20120196439
Abstract: In a method of forming a conductive pattern structure of a semiconductor device, a first insulating interlayer is formed on a substrate. A first wiring is formed to pass through the first insulating interlayer. An etch stop layer and a second insulating interlayer are sequentially formed on the first insulating interlayer. A second wiring is formed to pass through the second insulating interlayer and the etch stop layer. A dummy pattern is formed to pass through the second insulating layer and the etch stop layer at the same time as forming the second wiring. The second wiring is electrically connected to the first wiring. The dummy pattern is electrically isolated from the second wiring.
Type: Application
Filed: November 4, 2011
Publication date: August 2, 2012
Inventors: Kook-Joo KIM, Jin-Ho Kim, Seung-Ki Chae, Pil-Kwon Jun, Sun-Hee Park, Gyoung-Eun Byun
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PLATING METHOD USING ANALYSIS PHOTORESIST RESIDUE IN PLATING SOLUTION
Publication number: 20120183696
Abstract: A plating method includes supplying a plating solution into a plating bath, immersing a first substrate having a lower metal interconnection and a photoresist pattern in the plating solution, performing a first plating process and forming a first plating pattern on the first substrate, removing the first substrate from the plating solution, collecting a sample of the plating solution, analyzing a photoresist residue included in the sample, immersing a second substrate in the plating solution, and performing a second plating process and forming a second plating pattern on the second substrate.
Type: Application
Filed: October 24, 2011
Publication date: July 19, 2012
Inventors: Jung-Dae Park, Seung-Ki Chae, Pil-Kwon Jun, Sung-Hoon Bae, Yoon-Mi Lee, Da-Hee Lee, Min-Jung Kim
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Vacuum pump having rotation body cleaning unit with spraying holes on an output surface of the cleaning body surrounding a shaft
Patent number: 8083507
Abstract: Provided is a vacuum pump having a rotation body cleaning unit. The vacuum pump includes a case provided with rotation guide holes at opposite end parts. The case includes a rotation body placed inside the case and including a rotation shaft having opposite ends rotatably supported by the rotation guide holes and a number of lobes provided in the rotation shaft at predetermined intervals. Further, a cleaning part is supported by the case and placed in a space between the lobes and cleans the rotation body.
Type: Grant
Filed: March 17, 2008
Date of Patent: December 27, 2011
Assignee: Samsung Electronics Co., Ltd.
Inventors: Tea-Jin Park, Seung-Ki Chae, Kwang-Myung Lee, Sang-Gon Lee
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Method of cleaning a quartz part
Patent number: 7985297
Abstract: A cleaning solution for a quartz part and a method for cleaning the quartz part are provided. The cleaning solution includes from about 5 to about 35 wt % of an ammonium compound, from about 7 to about 55 wt % of an acidic oxidizing agent, from about 5 to about 30 wt % of a fluorine compound and a remaining amount of water. Residual thin films and impurities on the surface of the quartz part may be removed while reducing the damage onto the quartz part.
Type: Grant
Filed: July 9, 2009
Date of Patent: July 26, 2011
Assignee: Samsung Electronics Co., Ltd.
Inventors: Jung-Dae Park, Pil-Kwon Jun, Bo-Yong Lee, Tae-Hyo Choi, Da-Hee Lee, Seung-Ki Chae
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Apparatus for decomposing perfluorinated compounds and system for processing perfluorinated compounds using the apparatus
Patent number: 7976785
Abstract: The apparatus for decomposing PFCs includes an external electrode unit which is coupled to a reference voltage and which defines a flow space for the flow of the PFCs, and an internal electrode unit which is located within the flow space of the external electrode unit so as to define a reaction space between the internal electrode unit and the external electrode unit. The apparatus is also equipped with a voltage supply unit which applies an alternating voltage to the internal electrode unit which is of sufficient voltage and frequency to generate an electron beam within the reaction space which is capable of decomposing the PFCs.
Type: Grant
Filed: May 8, 2007
Date of Patent: July 12, 2011
Assignees: Samsung Electronics Co., Ltd., Forhuman Co., Ltd.
Inventors: Seung-ki Chae, Sang-gon Lee, In-ju Lee, Kyoung-hye Lee, Yong-hee Lee, Jin-ok Jung, Young-jo Shin
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METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING COMPOSITIONS FOR ETCHING COPPER
Publication number: 20110130000
Abstract: A method of manufacturing a semiconductor device includes preparing a substrate on which a fuze line containing copper is formed. The method further includes cutting the fuze line by emitting a laser beam, and applying a composition for etching copper to the substrate to finely etch a cutting area of the fuze line and to substantially remove at least one of a copper residue and a copper oxide residue remaining near the cutting area. The composition for etching copper includes about 0.01 to about 10 percent by weight of an organic acid, about 0.01 to 1.0 percent by weight of an oxidizing agent, and a protic solvent.
Type: Application
Filed: November 17, 2010
Publication date: June 2, 2011
Inventors: Jung-Dae PARK, Da-Hee Lee, Seung-Ki Chae, Pil-Kwon Jun, Kwang-Shin Lim
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Methods of manufacturing a semiconductor device using compositions for etching copper
Patent number: 7951653
Abstract: A method of manufacturing a semiconductor device includes preparing a substrate on which a fuze line containing copper is formed. The method further includes cutting the fuze line by emitting a laser beam, and applying a composition for etching copper to the substrate to finely etch a cutting area of the fuze line and to substantially remove at least one of a copper residue and a copper oxide residue remaining near the cutting area. The composition for etching copper includes about 0.01 to about 10 percent by weight of an organic acid, about 0.01 to 1.0 percent by weight of an oxidizing agent, and a protic solvent.
Type: Grant
Filed: November 17, 2010
Date of Patent: May 31, 2011
Assignee: Samsung Electronics Co., Ltd.
Inventors: Jung-Dae Park, Da-Hee Lee, Seung-Ki Chae, Pil-Kwon Jun, Kwang-Shin Lim
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Composition for etching silicon oxide and method of forming a contact hole using the same
Publication number: 20110073801
Abstract: In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.
Type: Application
Filed: November 30, 2010
Publication date: March 31, 2011
Inventors: Dong-Won Hwang, Kook-Joo Kim, Jung-In LA, Pil-Kwon Jun, Seung-Ki Chae, Yang-Koo Lee
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Apparatus and method for analyzing contaminants on wafer
Patent number: 7880138
Abstract: Provided is an apparatus and method for analyzing contaminants on a wafer. The apparatus includes: a wafer holder for supporting a wafer on which contaminants to be analyzed are located, a laser ablation device for irradiating a laser to the wafer to extract a discrete specimen from the wafer, an analysis cell for collecting a discrete specimen from the surface of the wafer by irradiating the laser, and an analysis device connected to the analysis cell for analyzing contaminants from the collected discrete specimen.
Type: Grant
Filed: December 21, 2007
Date of Patent: February 1, 2011
Assignee: Samsung Electronics Co., Ltd.
Inventors: Jae-Seok Lee, Heung-Bin Lim, Won-Kyung Ryu, Seung-Ki Chae, Yang-Koo Lee, Hun-Jung Yi
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Composition for etching silicon oxide and method of forming a contact hole using the same
Patent number: 7879736
Abstract: In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.
Type: Grant
Filed: June 29, 2007
Date of Patent: February 1, 2011
Assignees: Samsung Electronics Co., Ltd., Cheil Industries, Inc.
Inventors: Dong-Won Hwang, Kook-Joo Kim, Jung-In La, Pil-Kwon Jun, Seung-Ki Chae, Yang-Koo Lee
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Composition for removing a photoresist, method of preparing the composition, method of removing a photoresist and method of manufacturing a semiconductor device using the composition
Patent number: 7687448
Abstract: A composition for removing a photoresist includes about 5 to about 20 percent by weight of an alcoholamide compound, about 15 to about 60 percent by weight of a polar aprotic solvent, about 0.1 to about 6 percent by weight of an additive, and pure water. The alcoholamide compound is chemically structured as follows: where R1 is a hydroxyl group or a hydroxyalkyl group, and R2 is a hydrogen atom or a hydroxyalkyl group.
Type: Grant
Filed: September 22, 2009
Date of Patent: March 30, 2010
Assignee: Samsung Electronics Co., Ltd.
Inventors: Jung-Dae Park, Pil-Kwon Jun, Myoung-Ok Han, Se-Yeon Kim, Kwang-Shin Lim, Tae-Hyo Choi, Seung-Ki Chae, Yang-Koo Lee
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COMPOSITION FOR REMOVING A PHOTORESIST, METHOD OF PREPARING THE COMPOSITION, METHOD OF REMOVING A PHOTORESIST AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE COMPOSITION
Publication number: 20100009885
Abstract: A composition for removing a photoresist includes about 5 to about 20 percent by weight of an alcoholamide compound, about 15 to about 60 percent by weight of a polar aprotic solvent, about 0.1 to about 6 percent by weight of an additive, and pure water. The alcoholamide compound is chemically structured as follows: where R1 is a hydroxyl group or a hydroxyalkyl group, and R2 is a hydrogen atom or a hydroxyalkyl group.
Type: Application
Filed: September 22, 2009
Publication date: January 14, 2010
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventors: Jung-Dae PARK, Pil-Kwon JUN, Myoung-Ok HAN, Se-Yeon KIM, Kwang-Shin LIM, Tae-Hyo CHOI, Seung-Ki CHAE, Yang-Koo LEE
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METHOD OF CLEANING A QUARTZ PART
Publication number: 20100009883
Abstract: A cleaning solution for a quartz part and a method for cleaning the quartz part are provided. The cleaning solution includes from about 5 to about 35 wt % of an ammonium compound, from about 7 to about 55 wt % of an acidic oxidizing agent, from about 5 to about 30 wt % of a fluorine compound and a remaining amount of water. Residual thin films and impurities on the surface of the quartz part may be removed while reducing the damage onto the quartz part.
Type: Application
Filed: July 9, 2009
Publication date: January 14, 2010
Inventors: Jung-Dae PARK, Pil-Kwon Jun, Bo-Yong Lee, Tae-Hyo Choi, Da-Hee Lee, Seung-Ki Chae
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Composition for removing a photoresist, method of preparing the composition, method of removing a photoresist and method of manufacturing a semiconductor device using the composition
Patent number: 7608540
Abstract: A composition for removing a photoresist includes about 5 to about 20 percent by weight of an alcoholamide compound, about 15 to about 60 percent by weight of a polar aprotic solvent, about 0.1 to about 6 percent by weight of an additive, and pure water. The alcoholamide compound is chemically structured as follows: where R1 is a hydroxyl group or a hydroxyalkyl group, and R2 is a hydrogen atom or a hydroxyalkyl group.
Type: Grant
Filed: April 19, 2006
Date of Patent: October 27, 2009
Assignee: Samsung Electronics Co., Ltd.
Inventors: Jung-Dae Park, Pil-Kwon Jun, Myoung-Ok Han, Se-Yeon Kim, Kwang-Shin Lim, Tae-Hyo Choi, Seung-Ki Chae, Yang-Koo Lee
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Laser cleaning of backside of wafer for photolithographic processing
Patent number: 7556712
Abstract: A photolithography process may be carried out after cleaning the backside of a wafer by means of an apparatus that includes an illumination module for conducting an optical illumination operation of photolithography to the front side of the wafer, and a cleaning module for conducting a cleaning operation on the wafer backside. Providing the capability of removing particles from the wafer backside and eliminating defocusing effects due to wafer chucking errors, these and other embodiments improve reliability of the photolithography process, as well as productivity and yields for the semiconductor devices.
Type: Grant
Filed: December 4, 2006
Date of Patent: July 7, 2009
Assignee: Samsung Electronics Co., Ltd.
Inventors: Hun-Jung Yi, Seung-Ki Chae
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Etching method
Patent number: 7497963
Abstract: In this etching method, since an etching gas is introduced before introduction of free radicals into a processing chamber, the etching gas has been adsorbed on the surface of substrates when the free radicals are introduced. Accordingly, the free radicals react with the etching gas adsorbed on the surface of the substrates, and the reaction proceeds uniformly on the surface of the substrate. As a result, nonuniform etching does not occur on the surface of the substrate. Moreover, since the reaction between the etching gas and the free radicals occurs on the surface of the substrate, an intermediate product produced according to the reaction between the etching gas and the free radicals reacts with an etching object promptly. Therefore, the intermediate product is not exhausted from the processing chamber 12 excessively, and hence the etching efficiency is high.
Type: Grant
Filed: January 10, 2005
Date of Patent: March 3, 2009
Assignees: Samsung Electronics Co., Ltd., ULVAC, Inc.
Inventors: Kwang-Myung Lee, Ki-Young Yun, Seung-Ki Chae, No-Hyun Huh, Wan-Goo Hwang, Jung-Hyun Hwang, Shinji Yanagisawa, Kengo Tsutsumi, Seiichi Takahashi
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Method and apparatus for pump fault prediction
Publication number: 20080294382
Abstract: Example embodiments relate to a method and apparatus for pump fault prediction. A method of predicting a pump fault according to example embodiments may include collecting data in real time for qualitative variables associated with a pump and a corresponding semiconductor fabricating process, wherein the pump is configured to create a vacuum in a chamber during the semiconductor fabricating process. Principal components may be identified based on the collected data. Principal components exerting a primary influence on the operation of the pump may be selected from the identified principal components. A management variable may be generated to represent variations of the selected principal components. The management-variable may be monitored in real time to predict a pump fault.
Type: Application
Filed: May 9, 2008
Publication date: November 27, 2008
Inventors: Ki-hwan Lim, Tae-ho Kim, Seung-ki Chae, Sang-gon Lee, Byoung-hoon Moon
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ROTATION BODY CLEANING UNIT AND VACUUM PUMP HAVING THE SAME
Publication number: 20080226485
Abstract: Provided is a vacuum pump having a rotation body cleaning unit. The vacuum pump includes a case provided with rotation guide holes at opposite end parts. The case includes a rotation body placed inside the case and including a rotation shaft having opposite ends rotatably supported by the rotation guide holes and a number of lobes provided in the rotation shaft at predetermined intervals. Further, a cleaning part is supported by the case and placed in a space between the lobes and cleans the rotation body.
Type: Application
Filed: March 17, 2008
Publication date: September 18, 2008
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventors: Tea-Jin PARK, Seung-Ki CHAE, Kwang-Myung LEE, Sang-Gon LEE
